Enhanced thermal stability of organic solar cells on nano structured electrode by simple acid etching
Identifieur interne : 000130 ( Main/Repository ); précédent : 000129; suivant : 000131Enhanced thermal stability of organic solar cells on nano structured electrode by simple acid etching
Auteurs : RBID : Pascal:14-0090050Descripteurs français
- Pascal (Inist)
- Stabilité thermique, Cellule solaire organique, Gravure, Long terme, Electronique organique, Dispositif photovoltaïque, Cellule solaire, Addition étain, Couche ITO, Puissance thermique, Conversion énergie, Taux conversion, Hétérojonction, Rugosité, Absorption lumière, Séparation phase, Recuit thermique, Nanostructure, Oxyde d'indium, Hétérostructure, Acide butyrique, Ester, Composé du fullerène, Matériau dopé, 6865, 8535, 8460J, 8105T, ITO, Matériau nanostructuré.
English descriptors
- KwdEn :
- Butyric acid, Conversion rate, Doped materials, Energy conversion, Engraving, Ester, Fullerene compounds, Heterojunction, Heterostructures, ITO layers, Indium oxide, Light absorption, Long term, Nanostructure, Nanostructured material, Organic electronics, Organic solar cells, Phase separation, Photovoltaic cell, Roughness, Solar cell, Thermal annealing, Thermal power, Thermal stability, Tin addition.
Abstract
The long-term thermal stability of organic photovoltaic device has been emerged as a crucial characteristic to satisfy the demand of industry requiring lifespan of 20 year. In this paper, etched indium-tin-oxide (ITO) nanoelectrodes are employed to enhance the thermal stability and power conversion efficiency in poly(3hexylthiophene):methanofullerene bulk-heterojunction solar cells. A simple etching process for the ITO electrode was carried out using a hydrochloric acid solvent in order to significantly increase the roughness of the ITO surface. This nanostructured ITO not only induced efficient light harvesting, but also acted as a barrier that suppressed the PCBM phase separation, resulting in the lifespan increased from 33 h to 77 h during thermal annealing.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Enhanced thermal stability of organic solar cells on nano structured electrode by simple acid etching</title><author><name>MING LIANG JIN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical and Biomolecular Engineering (BK-21), Korea Advanced Institute of Science and Technology</s1><s2>Yuseong-gu, Daejeon 305-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yuseong-gu, Daejeon 305-701</wicri:noRegion></affiliation></author><author><name>JONG KIL CHOI</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical and Biomolecular Engineering (BK-21), Korea Advanced Institute of Science and Technology</s1><s2>Yuseong-gu, Daejeon 305-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yuseong-gu, Daejeon 305-701</wicri:noRegion></affiliation></author><author><name>DAE WOO KIM</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical and Biomolecular Engineering (BK-21), Korea Advanced Institute of Science and Technology</s1><s2>Yuseong-gu, Daejeon 305-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yuseong-gu, Daejeon 305-701</wicri:noRegion></affiliation></author><author><name sortKey="Park, Jong Min" uniqKey="Park J">Jong-Min Park</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical and Biomolecular Engineering (BK-21), Korea Advanced Institute of Science and Technology</s1><s2>Yuseong-gu, Daejeon 305-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yuseong-gu, Daejeon 305-701</wicri:noRegion></affiliation></author><author><name>CHENG JIN AN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical and Biomolecular Engineering (BK-21), Korea Advanced Institute of Science and Technology</s1><s2>Yuseong-gu, Daejeon 305-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yuseong-gu, Daejeon 305-701</wicri:noRegion></affiliation></author><author><name>HYEONG JUN KIM</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical and Biomolecular Engineering (BK-21), Korea Advanced Institute of Science and Technology</s1><s2>Yuseong-gu, Daejeon 305-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yuseong-gu, Daejeon 305-701</wicri:noRegion></affiliation></author><author><name sortKey="Kim, Bumjoon J" uniqKey="Kim B">Bumjoon J. Kim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical and Biomolecular Engineering (BK-21), Korea Advanced Institute of Science and Technology</s1><s2>Yuseong-gu, Daejeon 305-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yuseong-gu, Daejeon 305-701</wicri:noRegion></affiliation></author><author><name>YING DIAO</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Chemical Engineering, Stanford University</s1><s2>Stanford, CA 94305</s2><s3>USA</s3><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Stanford, CA 94305</wicri:noRegion></affiliation></author><author><name sortKey="Jung, Hee Tae" uniqKey="Jung H">Hee-Tae Jung</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical and Biomolecular Engineering (BK-21), Korea Advanced Institute of Science and Technology</s1><s2>Yuseong-gu, Daejeon 305-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yuseong-gu, Daejeon 305-701</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0090050</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0090050 INIST</idno><idno type="RBID">Pascal:14-0090050</idno><idno type="wicri:Area/Main/Corpus">000053</idno><idno type="wicri:Area/Main/Repository">000130</idno></publicationStmt><seriesStmt><idno type="ISSN">1566-1199</idno><title level="j" type="abbreviated">Org. electron. : (Print)</title><title level="j" type="main">Organic electronics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Butyric acid</term><term>Conversion rate</term><term>Doped materials</term><term>Energy conversion</term><term>Engraving</term><term>Ester</term><term>Fullerene compounds</term><term>Heterojunction</term><term>Heterostructures</term><term>ITO layers</term><term>Indium oxide</term><term>Light absorption</term><term>Long term</term><term>Nanostructure</term><term>Nanostructured material</term><term>Organic electronics</term><term>Organic solar cells</term><term>Phase separation</term><term>Photovoltaic cell</term><term>Roughness</term><term>Solar cell</term><term>Thermal annealing</term><term>Thermal power</term><term>Thermal stability</term><term>Tin addition</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Stabilité thermique</term><term>Cellule solaire organique</term><term>Gravure</term><term>Long terme</term><term>Electronique organique</term><term>Dispositif photovoltaïque</term><term>Cellule solaire</term><term>Addition étain</term><term>Couche ITO</term><term>Puissance thermique</term><term>Conversion énergie</term><term>Taux conversion</term><term>Hétérojonction</term><term>Rugosité</term><term>Absorption lumière</term><term>Séparation phase</term><term>Recuit thermique</term><term>Nanostructure</term><term>Oxyde d'indium</term><term>Hétérostructure</term><term>Acide butyrique</term><term>Ester</term><term>Composé du fullerène</term><term>Matériau dopé</term><term>6865</term><term>8535</term><term>8460J</term><term>8105T</term><term>ITO</term><term>Matériau nanostructuré</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The long-term thermal stability of organic photovoltaic device has been emerged as a crucial characteristic to satisfy the demand of industry requiring lifespan of 20 year. In this paper, etched indium-tin-oxide (ITO) nanoelectrodes are employed to enhance the thermal stability and power conversion efficiency in poly(3hexylthiophene):methanofullerene bulk-heterojunction solar cells. A simple etching process for the ITO electrode was carried out using a hydrochloric acid solvent in order to significantly increase the roughness of the ITO surface. This nanostructured ITO not only induced efficient light harvesting, but also acted as a barrier that suppressed the PCBM phase separation, resulting in the lifespan increased from 33 h to 77 h during thermal annealing.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1566-1199</s0></fA01><fA03 i2="1"><s0>Org. electron. : (Print)</s0></fA03><fA05><s2>15</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Enhanced thermal stability of organic solar cells on nano structured electrode by simple acid etching</s1></fA08><fA11 i1="01" i2="1"><s1>MING LIANG JIN</s1></fA11><fA11 i1="02" i2="1"><s1>JONG KIL CHOI</s1></fA11><fA11 i1="03" i2="1"><s1>DAE WOO KIM</s1></fA11><fA11 i1="04" i2="1"><s1>PARK (Jong-Min)</s1></fA11><fA11 i1="05" i2="1"><s1>CHENG JIN AN</s1></fA11><fA11 i1="06" i2="1"><s1>HYEONG JUN KIM</s1></fA11><fA11 i1="07" i2="1"><s1>KIM (Bumjoon J.)</s1></fA11><fA11 i1="08" i2="1"><s1>YING DIAO</s1></fA11><fA11 i1="09" i2="1"><s1>JUNG (Hee-Tae)</s1></fA11><fA14 i1="01"><s1>Department of Chemical and Biomolecular Engineering (BK-21), Korea Advanced Institute of Science and Technology</s1><s2>Yuseong-gu, Daejeon 305-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Chemical Engineering, Stanford University</s1><s2>Stanford, CA 94305</s2><s3>USA</s3><sZ>8 aut.</sZ></fA14><fA20><s1>680-684</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27255</s2><s5>354000506169460070</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>13 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0090050</s0></fA47><fA60><s1>P</s1><s3>CR</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Organic electronics : (Print)</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The long-term thermal stability of organic photovoltaic device has been emerged as a crucial characteristic to satisfy the demand of industry requiring lifespan of 20 year. In this paper, etched indium-tin-oxide (ITO) nanoelectrodes are employed to enhance the thermal stability and power conversion efficiency in poly(3hexylthiophene):methanofullerene bulk-heterojunction solar cells. A simple etching process for the ITO electrode was carried out using a hydrochloric acid solvent in order to significantly increase the roughness of the ITO surface. This nanostructured ITO not only induced efficient light harvesting, but also acted as a barrier that suppressed the PCBM phase separation, resulting in the lifespan increased from 33 h to 77 h during thermal annealing.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F02</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A40E</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Stabilité thermique</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Thermal stability</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Estabilidad térmica</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Cellule solaire organique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Organic solar cells</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Gravure</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Engraving</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" 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l="ENG"><s0>Tin addition</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Adición estaño</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Couche ITO</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>ITO layers</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Puissance thermique</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Thermal power</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Potencia térmica</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Conversion énergie</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Energy conversion</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Conversión energética</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Taux conversion</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Conversion rate</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Factor conversión</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Hétérojonction</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" 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optoelectrónico</s0><s5>18</s5></fC07><fN21><s1>118</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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